Ensemble E3 Series

Dual Core Microcontroller

The Ensemble E3 series of microcontroller is designed for applications demanding a combination of maximum power efficiency, high compute performance, and integrated security. It’s innovative multi-code design provides a dedicated system for power efficient operations, while the second core is ready to deliver high-performance processing when needed. Both cores can also be outfitted with dedicated NPU accelerators to boost Edge AI/ML capabilities and can operate independent of each other, enabling parallel model execution.

Key Benefits of E3:

  • High-Performance RTOS control and AI/ML (Artificial Intelligence/Machine Learning)

  • Low-power MCU/NPU wakes system

  • User interface and networking

E3 Specifications

High-Performance Dual-Core MCU
  • High-Performance Arm® Cortex®-M55 Core, up to 400 MHz, with Helium™ Vector Processing Extension, Double-Precision FPU, 1.25MB SRAM 0-wait State Tightly- Coupled Memory, 32KB Instruction and Data Caches, Armv8.1-M ISA with Arm TrustZone®, and 4.37 CoreMark®/MHz Performance Benchmark
  • Arm® Cortex®-M55 Core, up to 160 MHz, with Helium™ Vector Processing Extension, DoublePrecision FPU, 512KB of SRAM 0-wait State Tightly Coupled Memory, 32KB Instruction and Data Caches, Armv8.1-M ISA with Arm TrustZone®, and 4.37 CoreMark®/MHz Performance Benchmark
  • High-Performance 400-MHz 64-bit AXI Bus Fabric Common Across All CPUs
Efficient Micro NPUs for AI/ML Acceleration
  • 2× Arm Ethos™-U55 Neural Processing Units— 1× 256 MAC/cycle up to 204 GOPS, 1× 128 MAC/cycle up to 46 GOPS, On-the-Fly Weight Decompression with Dedicated DMA Controller
  • 800× Performance Uplift from Cortex-M4 for Inference Time (Source: Arm. MobileNet V2 1.0 Model for Object Classification)
  • 76× Less Energy Consumed when Using Ethos-U55 together with Cortex-M55 (Source: Arm. Measured on Alif Semiconductor Ensemble Device. MobileNet V2 1.0 Model for Object Classification)
Extreme-Low Power Technology
  • Autonomous Intelligent Power Management (aiPM™)
  • FD-SOI Low Leakage Process
  • 1.7 µA Consumed in STOP Mode with LPRTC, LPTIMER, LPCMP, BOR, 4KB Utility SRAM, Wake Pins
  • As Low as 27 µA/MHz Dynamic Consumption for High-Efficiency Cortex-M55
  • Multiple Power Domains, Dynamic Power, Gating, Voltage and Clock Scaling, DC-DC Converter
On-Chip Application Memory
  • High Endurance MRAM Non-Volatile Memory
    • Up to 5.5MB
  • SRAM
    • Up to 13.5MB
    • Optional Data Retention of 256KB or 512KB TCM SRAM Consuming 2.25 μA or 4.5 μA
    • 4KB Always-On Utility SRAM
External Memory Interfaces
  • 2× Octal SPI, each at up to 100 MHz for up to 100 MB/s SDR, 200 MB/s DDR, with Inline AES Decryption, XIP Mode Support, HyperBus Protocol Support, Enabling External Memory Expansion
  • 1× SD® v4.2, eMMC™ v5.1 Channel with DMA
Secure Enclave
  • Hardware-based Root-of-Trust (RoT) with Unique Device ID
  • Secure Key Generation and Storage, Secure Certificate Storage
  • Factory-provisioned Private Keys
  • Crypto Accelerators—AES (up to AES-256), ECC (up to 384 bits), SHA (up to SHA-256), RSA (up to RSA-3072), and NIST compliant TRNG
  • Secure Debugging with Certificate Authentication
Timing Control and Measurement
  • 12× Universal High-Resolution 32-bit Timers
    • Capable of Motor and LED Lighting Control
  • 2× Watchdog Timers
  • 4× Low-Power 32-bit Timers
  • 1× Real-Time Counter
  • 4× Quadrature Encoder Counters
Serial Communication Interfaces
  • 1× 10/100 Ethernet with DMA
  • 1× USB 2.0 HS/FS Host/Device with DMA
  • 1× SDIO v4.1 Channel with DMA
  • 1× CAN FD Channel up to 10 Mbps
  • 1× MIPI® I3C® Channel
  • 4× I2C Channels up to 3.4 Mbps Throughput
  • 1× Low-Power I2C Channel
  • 8× UART Channels up to 2.5 Mbps (4× with RS485 Driver Control)
  • 1× Low-Power UART Channel
  • 4× SPI Channels up to 50 Mbps Throughput
  • 1× Low-Power SPI Channel
Analog Interface Capabilities
  • 3× 12-bit ADC (18 Single-Ended Inputs)
  • 1× 24-bit ADC (4 Differential Inputs)
    • Programmable Gain Instrumentation Amplifier (1× to 128×)
  • 2× 12-bit DACs (2 channels)
  • 4× High-Speed Analog Comparators with 2.5-ns Response (16 Inputs)
  • 1× Low-Power Analog Comparator (4 Inputs)
  • Internal Temperature Sensor
  • Internal Precision Reference Voltage
Camera Interfaces
  • 1× 2-Lane MIPI CSI-2®
  • 1× Camera Parallel Interface (CPI), up to 16 bits
  • 1× Low-Power CPI, up to 8 bits
Display Interfaces & Graphics
  • Graphics LCD Controller
  • 1× Display Parallel Interface (DPI), up to 24-bit RGB
  • 1× 2-Lane MIPI DSI®
  • D/AVE 2D Graphics Processing Unit
Audio Interfaces
  • 4× I2S Synchronous Stereo Audio Interfaces
  • 1× Low-Power I2S Stereo Audio Interface
  • 4× 2-channel Pulse Density Modulation (PDM) Microphone Inputs (8 Mono Microphones)
  • 4× 2-channel Low-Power Pulse Density Modulation (LPPDM) Microphone Inputs (8 Mono Microphones)
General Input/Output
  • Up to 120× 1.8-V GPIOs (Shared with Peripherals)
  • Up to 8× Selectable 1.8-V to 3.3-V GPIOs (Shared with Peripherals)
Clock Generation
  • Internal Low-Frequency RC Oscillator (32.7 kHz, ±4%)
  • Internal High-Frequency RC Oscillator (Up to 76.8 MHz, ±1%)
  • External High-Frequency Crystal Oscillator or Quartz Crystal (24 MHz to 38.4 MHz)
  • External Low-Power Crystal Oscillator or Quartz Crystal (32.768 kHz)
  • One User Fractional Mode PLL
  • Global Event Mapping to Configurable Triggers
  • 3× 32-Channel General DMA Controllers
  • CRC Calculation Accelerator with Programmable Polynomials
  • Programmable Low Supply Voltage Detect Warning (Brown-Out Detect)
  • Power-On Reset and Brown Out Reset
  • Real-Time Clock
  • JTAG/SWD Debug Interface
Operating Parameters
  • 1.75 V to 4.2 V Primary Supply Range
  • 1.08 V to 1.98 V I/O Supply Range (1.8 V I/O)
  • 3.0 V to 4.2 V I/O Supply Range (3.3 V Flex I/O)
  • -40 °C to 85 °C Extended Ambient Temperature Range
  • -40 °C to 125 °C Extended Junction Temperature Range
  • WLCSP208, 0.5 mm Pitch
  • FBGA194, 0.5 mm Pitch

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